bd545, bd545a, bd545b, BD545C npn silicon power transistors product information 1 june 1973 - revised march 1997 copyright ? 1997, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . l designed for complementary use with the bd546 serie s l 85 w at 25c case temperatur e l 15 a continuous collector curren t l customer-specified selections availabl e sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraa b c e 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted ) notes: 1. these values apply when the base-emitter diode is open circuited . 2. derate linearly to 150c case temperature at the rate of 0.68 w/c . 3. derate linearly to 150c free air temperature at the rate of 28 mw/c . ratin g symbo l valu e uni t collector-base voltage ( i e = 0 ) bd545 bd545a bd545b bd545 c v cb o 40 60 80 10 0 v collector-emitter voltage ( i b = 0) (see note 1 ) bd545 bd545a bd545b bd545 c v ce o 40 60 80 10 0 v emitter-base voltag e v eb o 5 v continuous collector curren t i c 1 5 a continuous device dissipation at (or below) 25c case temperature (see note 2 ) p to t 8 5 w continuous device dissipation at (or below) 25c free air temperature (see note 3 ) p to t 3. 5 w operating free air temperature rang e t a -65 to +15 0 c operating junction temperature rang e t j -65 to +15 0 c storage temperature rang e t st g -65 to +15 0 c lead temperature 3.2 mm from case for 10 second s t l 26 0 c 4 .com u datasheet
bd545, bd545a, bd545b, bd545 c npn silicon power transistor s 2 june 1973 - revised march 199 7 product information notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2% . 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts . ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters . electrical characteristics at 25c case temperatur e paramete r test condition s mi n ty p ma x uni t v (br)ce o collector-emitter breakdown voltag e i c = 30 ma (see note 4 ) i b = 0 bd545 bd545a bd545b bd545 c 40 60 80 10 0 v i ce s collector-emitter cut-off curren t v c e = 40 v v c e = 60 v v c e = 80 v v c e = 100 v v b e = 0 v b e = 0 v b e = 0 v b e = 0 bd545 bd545a bd545b bd545 c 0.4 0.4 0.4 0. 4 m a i ce o collector cut-off curren t v c e = 30 v v c e = 60 v i b = 0 i b = 0 bd545/545a bd545b/545 c 0.7 0. 7 m a i eb o emitter cut-off curren t v e b = 5 v i c = 0 1 m a h f e forward current transfer rati o v c e = 4 v v c e = 4 v v c e = 4 v i c = 1 a i c = 5 a i c = 1 0 a (see notes 4 and 5 ) 60 25 1 0 v ce(sat ) collector-emitter saturation voltag e i b = 625 ma i b = 2 a i c = 5 a i c = 1 0 a (see notes 4 and 5 ) 0.8 1 v v b e base-emitter voltag e v c e = 4 v i c = 10 a (see notes 4 and 5 ) 1. 8 v h f e small signal forward current transfer rati o v c e = 10 v i c = 0. 5 a f = 1 kh z 2 0 | h f e | small signal forward current transfer rati o v c e = 10 v i c = 0. 5 a f = 1 mh z 3 thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 1.4 7 c/ w r q j a junction to free air thermal resistanc e 35. 7 c/ w resistive-load-switching characteristics at 25c case temperatur e paramete r test conditions ? mi n ty p ma x uni t t o n turn-on tim e i c = 6 a v be(off ) = -4 v i b(on ) = 0.6 a r l = 5 w i b(off ) = -0.6 a t p = 20 s, dc 2 % 0. 6 s t of f turn-off tim e 1 s 4 .com u datasheet
3 june 1973 - revised march 1997 bd545, bd545a, bd545b, BD545C npn silicon power transistors product information typical characteristic s figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 01 10 10 h fe - dc current gain 10 10 100 1000 tcs633aj v ce = 4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - a 001 01 10 10 v ce(sat) - collector-emitter saturation voltage - v 001 01 10 10 tcs633ab i c = 1 a i c = 3 a i c = 6 a i c = 10 a base-emitter voltage vs collector current i c - collector current - a 01 1 10 v be - base-emitter voltage - v 06 08 10 12 14 16 18 tcs633ac v ce = 4 v t c = 25c 4 .com u datasheet
bd545, bd545a, bd545b, bd545 c npn silicon power transistor s 4 june 1973 - revised march 199 7 product information maximum safe operating region s figure 4. thermal informatio n figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 001 01 10 10 100 sas633ae bd545 bd545a bd545b BD545C maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 tis633ac 4 .com u datasheet
5 june 1973 - revised march 1997 bd545, bd545a, bd545b, BD545C npn silicon power transistors product information sot-93 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . mechanical dat a sot-93 all linear dimensions in millimeters 4,90 4,70 1,37 1,17 0,78 0,50 2,50 typ. 15,2 14,7 12,2 max. 16,2 max. 18,0 typ. 31,0 typ. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 note a: the centre pin is in electrical contact with the mounting tab. mdxxaw ? 4 .com u datasheet
bd545, bd545a, bd545b, bd545 c npn silicon power transistor s 6 june 1973 - revised march 199 7 product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements . pi accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used . pi semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 1997, power innovations limite d 4 .com u datasheet
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